Band discontinuities at heterojunctions between crystalline and amorphous silicon
نویسندگان
چکیده
We present a theoretical investigation of the band lineups between crystalline and amorphous silicon, based on the first-principles pseudopotential method and the model-solid theory. We find that the offsets are very sensitive to the hydrogen content of the material; the valence-band offset for a junction with unhydrogenated a-Si is 20.25 eV, while for hydrogenated a-Si with a hydrogen content of 11% the offset becomes 0.20 eV. Consequences for the interpretation of experimental data are discussed. © 1995 American Vacuum Society.
منابع مشابه
Valence band alignment and hole transport in amorphous/crystalline silicon heterojunction solar cells
To investigate the hole transport across amorphous/crystalline silicon heterojunctions, solar cells with varying band offsets were fabricated using amorphous silicon suboxide films. The suboxides enable good passivation if covered by a doped amorphous silicon layer. Increasing valence band offsets yield rising hole transport barriers and reduced device effciencies. Carrier transport by thermal ...
متن کاملValence band offset in heterojunctions between crystalline silicon and amorphous silicon (sub)oxides (a-SiOx:H, 0<x<2)
The heterojunction between amorphous silicon (sub)oxides (a-SiOx:H, 0<x<2) and crystalline silicon (c-Si) is investigated. We combine chemical vapor deposition with in-system photoelectron spectroscopy in order to determine the valence band offset ∆EV and the interface defect density, being technologically important junction parameters. ∆EV increases from ≈ 0.3 eV for the a-Si:H/c-Si interface ...
متن کاملElectronic properties of amorphous siliconand its interface with crystalline silicon
B Bader Theory for charge analysis 77 Bibliography 89 Introduction The wide eeort of the past decade to understand physical properties of the semiconductor heterojunctions has provided many fundamental and applica-tive results 1, 2]. The experience acquired on simple systems like isovalent common anion heterojunctions, e.g. GaAs/AlAs, has been successfully extended to heterovalent systems and a...
متن کاملCharacterization of silicon heterojunctions for solar cells
Conductive-probe atomic force microscopy (CP-AFM) measurements reveal the existence of a conductive channel at the interface between p-type hydrogenated amorphous silicon (a-Si:H) and n-type crystalline silicon (c-Si) as well as at the interface between n-type a-Si:H and p-type c-Si. This is in good agreement with planar conductance measurements that show a large interface conductance. It is de...
متن کاملAmorphous SilicodCrystalline Silicon Heterojunctions for Nuclear Radiation Detector Applications
Results on the characterization of the elecmcal properties of amorphous silicon-films for the three different growth methods, RF sputtering, PECVD, and LPCVD are reported. The performance of these a-Si films as heterojunctions on high resistivity p-type and n-type crystalline silicon is examined by measuring the noise, leakage current and the alpha particle response of 5 mm diameter detector st...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
عنوان ژورنال:
دوره شماره
صفحات -
تاریخ انتشار 1995